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| CYStech Electronics Corp. High -speed switching diode Spec. No. : C303N3R Issued Date : 2003.04.12 Revised Date Page No. : 1/4 DAN212N3 Description The DAN212N3 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT-23 plastic SMD package. Equivalent Circuit DAN212N3 2 3 1Anode 2Not Connected 3Cathode 1 SOT-23 Cathode Anode NC Features * High switching speed: max. 4ns * Continuous reverse voltage: max. 70V * Repetitive peak reverse voltage: max. 85V * Repetitive peak forward current: max. 500mA. * Small plastic SMD package Applications * High-speed switching in thick and thin-film circuits. DAN212N3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings @TA=25 Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=125 prior to surge t=1s t=1ms t=1s Total power dissipation(Note 1) Junction Temperature Storage Temperature Note 1: Device mounted on an FR-4 PCB. Spec. No. : C303N3R Issued Date : 2003.04.12 Revised Date Page No. : 2/4 Symbol VRRM VR IF IFRM IFSM Ptot Tj Tstg Min -65 Max 85 70 200 500 4 1 0.5 250 150 +150 Unit V V mA mA A A A mW C C Electrical Characteristics @ Tj=25 unless otherwise specified Parameters Forward voltage Symbol VF Conditions IF=1mA IF=10mA IF=50mA IF=150mA VR=25V VR=75V VR=25V,Tj=150 VR=75V,Tj=150 VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100, measured at IR=1mA when switched from IF=10mA tr=20ns Min Typ. Max 715 855 1 1.25 30 1 30 50 1.5 4 1.75 Unit mV mV V V nA A A A pF ns V Reverse current Diode capacitance Reverse recovery time Forward recovery voltage IR Cd trr Vfr - - Thermal Characteristics Symbol Rth,j-tp Rth, j-a Parameter thermal resistance from junction to tie-point thermal resistance from junction to ambient Conditions Note 1 Value 360 500 Unit /W /W Note 1: Device mounted on an FR-4 PCB. DAN212N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Forward Biased Reverse-Biased Voltage Capacitance & Voltage & Forward Current 1 Spec. No. : C303N3R Issued Date : 2003.04.12 Revised Date Page No. : 3/4 450 1 Capacitance & Reverse-Biased Voltage Current-IF (mA) Capacitance-Cd (pF) 150 0.1 0 0 0.1 500 Reverse Biased Voltage-VF(mV) Forward Biased Voltage-VR (V) 1 1000 10 1500 2000 100 Capacitance-Cd (pF) 0.1 0.1 300 Reverse Biased Voltage-VR (V) 1 10 100 Power Derating 300 250 PD(mW), Power Dissipation 200 150 100 50 0 0 20 40 o 60 80 100 120 140 160 Ta( C ), Ambient Temperature DAN212N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C303N3R Issued Date : 2003.04.12 Revised Date Page No. : 4/4 Marking: A L 3 B 1 2 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style:Pin.1. Anode 2. Not Connected 3.Cathode D K S 5D TE V G C H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DAN212N3 CYStek Product Specification |
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